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| Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBD4148 Features * * * Low Current Leakage Low Cost Small Outline Surface Mount Package C Pin Configuration Top View 350mW 100 Volt Silicon Epitaxial Diode KA2 A A D SOT-23 * * * Maximum Ratings Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Maximum Thermal Resistance; 357K/W Junction To Ambient G F E C B Electrical Characteristics @ 25C Unless Otherwise Specified Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR VRM IO PTOT TJ IFSM 75V 100V 150mA 350mW 150C 1A t=1s,Non-Repetitive Resistive Load f > 50Hz H J DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 VF .855V IFM = 10mA; TJ = 25C* TJ = 25C VR = 20 V DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE IR 25nA Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2% CJ 2pF .037 .950 .037 .950 www.cnelectr.com MMBD4148 Figure 1 Typical Forward Characteristics 20 10 6 4 350 2 MilliAmps 1 .6 .4 .2 25C .1 .06 .04 .02 .01 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 0 70 Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 C Admissable Power Dissipation - MilliWattsversus Ambient Temperature - C 125 150 175 280 420 Figure 2 Forward Derating Curve 210 MilliWatts 140 Figure 3 Junction Capacitance 10 6 4 2 pF 1 .6 .4 .2 .1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25C Junction Capacitance - pFversus Reverse Voltage - Volts www.cnelectr.com MMBD4148 Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 40 20 10 NanoAmps 6 4 2 1 .6 .4 .2 .1 20 40 60 TJ Instantaneous Reverse Leakage Current - NanoAmperes versus Junction Temperature - C 80 100 120 140 TA=25C 200 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 MilliAmps Figure 5 Peak Forward Surge Current 1200 1000 800 600 400 2 www.cnelectr.com |
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